2 edition of Electrodeposition of PbS, PbSe and PbTe thin films found in the catalog.
Electrodeposition of PbS, PbSe and PbTe thin films
|Series||VTT publications -- 423., VTT julkaisuja -- 423.|
|Contributions||Valtion teknillinen tutkimuskeskus.|
|The Physical Object|
|Pagination||1 v. (various pagings) :|
After 60 years, low-cost, versatile PbS and PbSe polycrystalline thin films remain the photoconductive detectors of choice for many applications in the 1- 3 Î¼m and Î¼m spectral range. Current development with lead salts is in the FPAs configuration. Figure 2 shows a survey spectra of a thin PbSe film on ()ZnTe in the absence and in the presence of Cd 2+ in the electrolyte. The thickness of the PbSe films, estimated from Faraday law, amounts to nm without Cd 2+ and nm with Cd 2+ in the electrolyte.
Thin films of PbSe of – nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90– nm in thickness, were also obtained by chemical deposition from a . The formation of thin Au films by vacuum evaporation on lead and tin chalcogenides is investigated. Single crystal chalcogenide substrates are prepared by vacuum evaporation onto KCl. The films are studied by RHEED prior to removal from the KCl substrate and by TEM and TED after removing the composite Au–chalcogenide film from the KCl. A remarkable variety of .
[ ] K. Arledge, B. Weng,* B. Uchoa, "Chemical Sensing with Topological Photonic Arrays of Circular Waveguides " under review () G. Yang, B. Weng,* "Reactive ion etching of PbSe thin film grown on silicon substrate in CH4/H2/Ar plasma atmosphere," under review () T. Hemati, X. Zhang, B. Weng,* "A Direct Oriented-Attachment Growth of Lead-Chalcogenide Mid-Infrared Nanocrystals Film. Figure Figure4a 4a presents a bright-field TEM image of the PbSe-ZnSe composite thin film containing 5 mol% PbSe. Dark isolated grains with sizes of 25 to 50 nm are seen dispersed along the grain boundary of the bright area. Figure 4b-e presents an STEM-EDX elemental mapping of the sample through X-ray detection of Zn K (red), Se K (blue), and Pb L (green).
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1. Introduction. Lead chalcogenides (PbS, PbSe, PbTe) are narrow band gap photoconductors which have been studied in the field of IR detection. Lead chalcogenide thin films have been deposited, for example, by molecular beam epitaxy, chemical bath deposition, chemical vapor deposition, atomic layer epitaxy 4, 5, and successive ionic layer adsorption Cited by: Electrodeposition of PbS, PbSe and PbTe thin films.
Espoo Technical Research Centre of Finland, Lead chalcogenides (PbS, PbSe, PbTe) are narrow band gap semiconductors which are largely used. Particular attention was paid to the anodic behavior of electrodeposited PbTe thin films. It has been demonstrated that a tellurium excess can manifest either in its metallic state or within the PbTe crystallites.
The anodic dissolution of PbTe films also suggests the deposition of elementary tellurium during the first stage of by: 6. Two different electrodeposition methods were used; PbSe and PbTe thin films were prepared at constant potential while PbS was deposited by cycling the potential.
Chemical and physical properties of the films were examined by various techniques, and their electrical properties were studied as well. Electrodeposition of PbTe thin films.
For this study PbTe and PbSe thin film nanolaminates have been prepared on silicon substrates with native oxide by. PbSe/PbTe thin-film superlattices with modulation wavelengths (periods) of and nm are reported here.
These films were characterized using electron PbSe and PbTe thin films book microanalysis, X- ray diffraction, atomic force microscopy (AFM), and infrared reflection absorption measurements. PbS, PbSe, PbTe thin films have been also prepared by electrodeposition which is a simple and low cost method.
Nevertheless heteroepitaxial growth of these compounds on Si or III–V semiconductors takes advantage of integration technology to. Thin films of PbSe semiconductors are important for mid-wave infrared imaging applications.
There is a need for a low-cost large-area PbSe thin film d. Underpotential deposition (UPD) is a type of electrochemical surfaced-limited reaction used in the present studies for the formation of PbSe/PbTe superlattices via electrochemical ALD. PbSe/PbTe thin-film superlattices with modulation wavelengths (periods) of and nm are reported here.
Introduction. Electrodeposition as a low-cost, simple, easily scalable and widely available method of fabrication of thin films, is often used for preparation of layers of binary sulphides, selenides or tellurides of various them the following systems Cu 2 S, SnS, PbS, PbSe, PbTe, NiSe, ZnSe or CdSe were most intensively studied, revealing the optimal.
We report the growth of PbSe, PbTe, and PbSe/PbTe-superlattice thin films using Electrochemical Atomic Layer Epitaxy. This method allows the compounds to be deposited one monolayer at a time. Request PDF | On May 1,Cédric Frantz and others published Electrodeposition of PbTe thin films: Electrochemical behavior and effect of reverse pulse potential |.
The (PbTe)1–2x(PbSe)x(PbS)x system is an excellent platform to study phase competition between entropically driven atomic mixing (solid solution behavior) and enthalpy-driven phase separation. We observe that the thermoelectric properties of the PbTe–PbSe–PbS 2% Na doped are superior to those of 2% Na-doped PbTe–PbSe and PbTe–PbS.
Various chemical methods on the synthesis of films from the aqueous solution precursors either by passing the current or various appropriate conditions are used so that the reaction mechanism forms the thin films of the semiconducting or metallic materials like PbTe, CdTe and PbSe [18–20] which is two-step mechanism.
In chemical methods the. We report the synthesis of amorphous (PbSe) −x Cd x (x = 5, 10, 15, and 20) nanoparticle thin films using thermal evaporation method under argon gas atmosphere. Thin films with a thickness of 20 nm have been deposited on glass substrates at room temperature under a continuous flow (50 sccm) of argon.
films . Lead chalcogenides (PbSe, PbTe, and PbS) are IV-VI narrow band-gap semiconductor over several decade have been motivated by their importance for applications such as IR detectors, photographic plates, photo resisters,lasers, light-emitting device, photovoltaic's, and high temperature thermoelectric .
Nanocrystalline PbS thin films with different molarities of the solutions ( to M) have been prepared and characterized. The size of the PbS nanocrystals in the deposited film is affected by the molarity of the solutions. The band gap of the PbS nanocrystalline material increases with decrease of crystallite sizes.
tube, from which thin PbS film was prepared by thermal evaporation technique. Specimen was deposited on quartz crystal and the thickness of the film was Å.
From FTIR spectrophotometer, the optical properties of thin PbS film were determined in the range of () energy gap of PbS film was found to be.
In the current work, Lead Telluride (PbTe) thin films were grown on stainless steel and copper substrate two electrode electrodeposition technique. Orthorhombic structure of PbTe was determined by x-ray diffraction (XRD) on both substrates. This expression gives a Coulomb potential experienced by a vacancy site from its NNs, where is the Coulomb constant, is the dielectric constant of the PbX systems (, and at K for PbS, PbSe and PbTe, respectively), is the effective charge located on the site, is the effective charge of the jth NN of the selected and r is the.
We report an alternative synthesis and the first optical characterization of colloidal PbTe nanocrystals (NCs). We have synthesized spherical PbTe NCs having a size distribution as low as 7%, ranging in diameter from to nm, with first exciton transitions tuned from to nm.
The syntheses of colloidal cubic-like PbSe and PbTe NCs using a PbO “one-pot” .Photoexcitation of PbS, PbSe, and PbTe QD films at nm with power densities as low as 30 W/cm 2 gives rise to several peaks related to both lead(II) oxide and the group VI chalcogenates (PbXO 4).
The amplitudes of these peaks are shown to increase with continuous laser illumination in air, but are completely absent for samples illuminated. Vaidyanathan R, Cox SM, Happek U, Banga D, Mathe MK, Stickney JL () Preliminary studies in the electrodeposition of PbSe/PbTe superlattice thin films via electrochemical atomic layer deposition (ALD).
Langmuir 22(25)– Google Scholar.